High Power RF Amplifier Modules
with Stop Frequency from 500 MHz up to 1000 MHz

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SKU: 1100

The BBM2E4AJP (SKU 1100) is suitable for ultra broadband or band specific high power linear applications. This amplifier utilizes silicon LDMOS power devices that provide high gain, wide dynamic range, low distortion and good linearity. Exceptional performance, long term reliability and high efficiency are achieved by employing advanced broadband RF matching networks and combining techniques, EMI/RFI filters, machined housings and qualified components. Empower RF’s ISO9001 Quality Assurance Program assures consistent performance and the highest reliability.

• Solid-state Class AB linear design
• Excellent Linearity and low harmonic distortion
• Extremely wide instantaneous bandwidth
• Compact and lightweight
• Built-in control, monitoring and protection circuits
• Suitable for CW, AM and FM (Consult factory for other modulation types)
• 50 ohm input and output impedance
• Highly rugged and reliable
• RoHS Compliant version available
Power, Monitoring and Control via D-Sub 9-Pin, Male
• Pin 2 Current Monitor Analog voltage relative to IDD @ 50mV/100mA
• Pin 3 Temp Sensor Analog voltage relative to module’s temperature @ 10mV/°C
• Pin 4 VVA Analog Control level: 0 – 5Volts Maximum Gain: 0VDC, Minimum Gain: 5VDC
• Pin 5 Shutdown Amplifier Disable: TTL Logic High (5V) (Internally Pulled-Low)
• Pins 6, 7 VDD +28.0VDC ±2.0V
• Pins 8, 9 GND Ground